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1

Ge/IIIV fin field-effect transistor common gate process and numerical simulations

Chen, Bo-Yuan, Chen, Jiann-Lin, Chu, Chun-Lin, Luo, Guang-Li, Lee, Shyong, Chang, Edward Yi

Journal:

Journal of Micro/Nanolithography MEMS and MOEMS

Année:

2017

Langue:

english

Fichier:

PDF, 2.15 MB

english, 2017

2

Effects of Al[sub x]Ga[sub 1−x]N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition

Lin, Kung-Liang, Chang, Edward-Yi, Hsiao, Yu-Lin, Huang, Wei-Ching, Luong, Tien-Tung, Wong, Yuen-Yee, Li, Tingkai, Tweet, Doug, Chiang, Chen-Hao

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2010

Langue:

english

Fichier:

PDF, 679 KB

english, 2010

3

Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations

Fang, Chao-Yi, Huang, Weng-Jung, Chang, Edward Yi, Lin, Chia-Feng, Feng, Ming-Shiann

Journal:

Japanese Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 188 KB

english, 2003

4

[IEEE 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hsinchu, Taiwan (2015.6.29-2015.7.2)] 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits - An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure

Yao, Jing-Neng, Lin, Yueh-Chin, Chuang, Yu-Lin, Huang, Yu-Xiang, Shih, Wang-Cheng, Sze, Simon M., Chang, Edward Yi

Année:

2015

Langue:

english

Fichier:

PDF, 241 KB

english, 2015

5

Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells

Liao, Shun Sing, Chuang, Chuan Lung, Lin, Yueh Chin, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi

Journal:

Thin Solid Films

Année:

2018

Langue:

english

Fichier:

PDF, 1.31 MB

english, 2018

6

Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications

Huang-Ming Lee, Kartika Chandra Sahoo, Yiming Li, Jong-Ching Wu, Edward Yi Chang

Journal:

Thin Solid Films

Année:

2010

Langue:

english

Fichier:

PDF, 713 KB

english, 2010

7

Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy

Yuen-Yee Wong, Edward Yi Chang, Yue-Han Wu, Mantu K. Hudait, Tsung-Hsi Yang, Jet-Rung Chang, Jui-Tai Ku, Wu-Ching Chou, Chiang-Yao Chen, Jer-Shen Maa, Yueh-Chin Lin

Journal:

Thin Solid Films

Année:

2011

Langue:

english

Fichier:

PDF, 825 KB

english, 2011

8

Room temperature self-organized gold nanoparticles materials for embedded electronic devices

Chun-Chi Chen, Hsin-Chiang You, Edward Yi Chang, Fu-Hsiang Ko

Journal:

Journal of Materials Science: Materials in Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 608 KB

english, 2013

9

Disassembly mediated fluorescence recovery of gold nanodots for selective sulfide sensing

Yuan, Zhiqin, Peng, Meihua, Shi, Lei, Du, Yi, Cai, Na, He, Yan, Chang, Huan-Tsung, Yeung, Edward S.

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 419 KB

english, 2013

10

Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations

Tang, Shih-Hsuan, Kuo, Chien-I, Trinh, Hai-Dang, Yi Chang, Edward, Nguyen, Hong-Quan, Nguyen, Chi-Lang, Luo, Guang-Li

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2013

Langue:

english

Fichier:

PDF, 5.99 MB

english, 2013

11

Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz

Fatah, Faiz, Kuo, Chien-I, Hsu, Heng-Tung, Chiang, Che-Yang, Hsu, Ching-Yi, Miyamoto, Yasuyuki, Chang, Edward Yi

Journal:

Japanese Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 448 KB

english, 2012

12

[IEEE 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur, Malaysia (2012.09.19-2012.09.21)] 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) - Growth and fabrication of AlGaN/GaN HEMT on SiC substrate

Wong, Yuen-Yee, Chiu, Yu-Sheng, Luong, Tien-Tung, Lin, Tai-Ming, Ho, Yen-Teng, Lin, Yue-Chin, Chang, Edward Yi

Année:

2012

Langue:

english

Fichier:

PDF, 387 KB

english, 2012

13

Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

Chiu, Yu-Sheng, Lin, Tai-Ming, Nguyen, Hong-Quan, Weng, Yu-Chen, Nguyen, Chi-Lang, Lin, Yueh-Chin, Yu, Hung-Wei, Yi Chang, Edward, Lee, Ching-Ting

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2014

Langue:

english

Fichier:

PDF, 1.99 MB

english, 2014

14

Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect

Szu-Ping Tsai,, Heng-Tung Hsu,, Che-Yang Chiang,, Yung-Yi Tu,, Chia-Hua Chang,, Ting-En Hsieh,, Huan-Chung Wang,, Shih-Chien Liu,, Chang, Edward Yi

Journal:

IEEE Electron Device Letters

Année:

2014

Langue:

english

Fichier:

PDF, 748 KB

english, 2014

15

Evaluation of Electrical Characteristics of the Copper-Metallized SPDT GaAs Switches at Elevated Temperatures

Wu, Yun-Chi, Chang, Edward Yi, Lin, Yueh-Chin, Hsu, Li-Han

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2008

Langue:

english

Fichier:

PDF, 374 KB

english, 2008

16

An ultra low cost and miniature 950–2050 MHz GaAs MMIC downconverter‐I: Design approach and simulation

Hsieh, Ting‐Hua, Wang, Huei, Wang, Tahui, Chen, Tzu‐Hung, Chiang, Yit‐Chyun, Tseng, San‐Tien, Chen, Andy, Yi Chang, Edward

Journal:

Journal of the Chinese Institute of Engineers

Année:

1995

Langue:

english

Fichier:

PDF, 556 KB

english, 1995

17

Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors

Huang, Wei-Ching, Liu, Kuan-Shin, Wong, Yuen-Yee, Hsieh, Chi-Feng, Chang, Edward-Yi, Hsu, Heng-Tung

Journal:

Japanese Journal of Applied Physics

Année:

2015

Langue:

english

Fichier:

PDF, 972 KB

english, 2015

18

GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications

Hsieh, Ting-En, Lin, Yueh-Chin, Li, Fang-Ming, Shi, Wang-Cheng, Huang, Yu-Xiang, Lan, Wei-Cheng, Chin, Ping-Chieh, Chang, Edward Yi

Journal:

Journal of Electronic Materials

Année:

2015

Langue:

english

Fichier:

PDF, 2.22 MB

english, 2015

19

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

Huang, Wei-Ching, Chu, Chung-Ming, Hsieh, Chi-Feng, Wong, Yuen-Yee, Chen, Kai-wei, Lee, Wei-I, Tu, Yung-Yi, Chang, Edward-Yi, Dee, Chang Fu, Majlis, B. Y., Yap, S. L.

Journal:

Journal of Electronic Materials

Année:

2016

Langue:

english

Fichier:

PDF, 1.74 MB

english, 2016

20

Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNXSchottky Metal Structures for High-Power Applications

Hsieh, Ting-En, Lin, Yueh-Chin, Chu, Chung-Ming, Chuang, Yu-Lin, Huang, Yu-Xiang, Shi, Wang-Cheng, Dee, Chang-Fu, Majlis, Burhanuddin Yeop, Lee, Wei-I, Chang, Edward Yi

Journal:

Journal of Electronic Materials

Année:

2016

Langue:

english

Fichier:

PDF, 2.65 MB

english, 2016

21

Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design

Tsai, Szu-Ping, Hsu, Heng-Tung, Wuerfl, Joachim, Chang, Edward Yi

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 1.09 MB

english, 2016

22

Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition

Hsiao, Chih-Jen, Ha, Minh-Thien-Huu, Liu, Chun-Kuan, Nguyen, Hong-Quan, Yu, Hung-Wei, Chang, Sheng-Po, Wong, Yuen-Yee, Maa, Jer-Shen, Chang, Shoou-Jinn, Chang, Edward Yi

Journal:

Journal of Materials Science: Materials in Electronics

Année:

2017

Langue:

english

Fichier:

PDF, 3.55 MB

english, 2017

23

Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

Lumbantoruan, Franky J., Wong, Yuen-Yee, Huang, Wei-Ching, Yu, Hung-Wei, Chang, Edward-Yi

Journal:

Journal of Electronic Materials

Année:

2017

Langue:

english

Fichier:

PDF, 1.40 MB

english, 2017

24

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

Ha, Minh Thien Huu, Huynh, Sa Hoang, Do, Huy Binh, Nguyen, Tuan Anh, Luc, Quang Ho, Lee, Ching Ting, Chang, Edward Yi

Journal:

Applied Physics Express

Année:

2018

Langue:

english

Fichier:

PDF, 1.54 MB

english, 2018

25

[IEEE 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Chengdu, China (2017.7.4-2017.7.7)] 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Bias- and temperature-assisted trapping/de-trapping of ron degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate

Zhang, Jin-Ming, Hsieh, Ting-En, Wu, Tian-Li, Chen, Szu-Hao, Chen, Shi-Xuan, Chou, Po-Chien, Chang, Edward Yi

Année:

2017

Langue:

english

Fichier:

PDF, 315 KB

english, 2017

26

[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses

Yang, Chih-Yi, Wu, Tian-Li, Hsieh, Tin-En, Chang, Edward Yi

Année:

2018

Langue:

english

Fichier:

PDF, 300 KB

english, 2018

27

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Lin, Yen-Ku, Bergsten, Johan, Leong, Hector, Malmros, Anna, Chen, Jr-Tai, Chen, Ding-Yuan, Kordina, Olof, Zirath, Herbert, Chang, Edward Yi, Rorsman, Niklas

Journal:

Semiconductor Science and Technology

Année:

2018

Langue:

english

Fichier:

PDF, 836 KB

english, 2018

28

[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Electrical Properties of Compound 2D Semiconductor Mo1−xNbxS2

Lu, Peng, Ho, Yen Teng, Chu, Yung-Ching, Zhang, Ming, Chien, Po-Yen, Luong, Tien-Tung, Chang, Edward Yi, Woo, Jason C. S.

Année:

2018

Langue:

english

Fichier:

PDF, 3.42 MB

english, 2018

29

Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications

Yao, Jing-Neng, Lin, Yueh-Chin, Wong, Ying-Chieh, Huang, Ting-Jui, Hsu, Heng-Tung, Sze, Simon M., Chang, Edward Yi

Journal:

ECS Journal of Solid State Science and Technology

Année:

2019

Langue:

english

Fichier:

PDF, 581 KB

english, 2019

30

Is personal growth initiative associated with later life satisfaction in Chinese college students? A 15‐week prospective analysis

Chang, Edward C., Yang, Hongfei, Yi, Shangwen, Xie, Fei, Liu, Jiting, Ren, Haining, Zhang, Jiaqi, Zhang, Zhuoran, Wu, Runzhe, Lin, Yijing, Li, Mingqi, Wu, Kaidi, Ip, Ka, Lucas, Abigael G., Chang, Oliv

Journal:

Asian Journal of Social Psychology

Année:

2019

Langue:

english

Fichier:

PDF, 98 KB

english, 2019

31

Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers

Jaafar, Muhammad Musoddiq, Ooi, Poh Choon, Mohd. Razip Wee, M. F., Mohammad Haniff, Muhammad Aniq Shazni, Mohamed, Mohd Ambri, Chang, Edward Yi, Yeop Majlis, Burhanuddin, Dee, Chang Fu

Journal:

Journal of Materials Science: Materials in Electronics

Année:

2019

Langue:

english

Fichier:

PDF, 2.59 MB

english, 2019

32

[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Han, Ping-Cheng, Yan, Zong-Zheng, Wu, Chia-Hsun, Chang, Edward Yi, Ho, Yu-Hsuan

Année:

2019

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2019

33

Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications

Elangovan, Surya, Cheng, Stone, Chang, Edward Yi

Journal:

Année:

2020

Fichier:

PDF, 1.11 MB

2020

34

[IEEE 2020 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2020.6.13-2020.6.14)] 2020 IEEE Silicon Nanoelectronics Workshop (SNW) - Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT

Kaushik, Pragyey Kumar, Kumar Singh, Sankalp, Gupta, Ankur, Basu, Ananjan, Chang, Edward Yi

Année:

2020

Fichier:

PDF, 3.10 MB

2020

35

Suppression of urate crystal-induced canine joint inflammation by heterologous anti-polymorphonuclear leukocyte Serum

Yi-Han Chang, Edward J. Gralla

Journal:

Arthritis & Rheumatism

Année:

1968

Langue:

english

Fichier:

PDF, 306 KB

english, 1968

36

Inhibition of the Akt, cyclooxygenase-2, and matrix metalloproteinase-9 pathways in combination with androgen deprivation therapy: Potential therapeutic approaches for prostate cancer

Hiroshi Miyamoto, Saleh Altuwaijri, Yi Cai, Edward M. Messing, Chawnshang Chang

Journal:

Molecular Carcinogenesis

Année:

2005

Langue:

english

Fichier:

PDF, 111 KB

english, 2005

37

Evaluation of Cu-bumps with lead-free solders for flip-chip package applications

Kung-Liang Lin, Edward-Yi Chang, Lin-Chi Shih

Journal:

Microelectronic Engineering

Année:

2009

Langue:

english

Fichier:

PDF, 443 KB

english, 2009

38

A flip-chip packaged 80-nm In0.7Ga0.3As MHEMT for millimeter-wave low-noise applications

Chin-Te Wang, Chien-I Kuo, Heng-Tung Hsu, Edward Yi Chang, Li-Han Hsu, Wee-Chin Lim, Che-Yang Chiang, Szu-Ping Tsai, Guo-Wei Huang

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 678 KB

english, 2011

39

The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy

Yuen-Yee Wong, Edward Yi Chang, Tsung-Hsi Yang, Jet-Rung Chang, Yi-Cheng Chen, Jui-Tai Ku, Ching-Ting Lee, Chun-Wei Chang

Journal:

Journal of Crystal Growth

Année:

2009

Langue:

english

Fichier:

PDF, 769 KB

english, 2009

40

Approaches adopted to assess environmental impacts of PCDD/F emissions from a municipal solid waste incinerator

Jenshi B. Wang, Mao-Sung Wang, Edward Ming-Yang Wu, Guo-Ping Chang-Chien, Yi-Chieh Lai

Journal:

Journal of Hazardous Materials

Année:

2008

Langue:

english

Fichier:

PDF, 794 KB

english, 2008

41

Influence of memory effect caused by aged bag filters on the stack PCDD/F emissions

Hsing-Wang Li, Lin-Chi Wang, Chun-Chi Chen, Xing-Yi Yang, Guo-Ping Chang-Chien, Edward Ming-Yang Wu

Journal:

Journal of Hazardous Materials

Année:

2011

Langue:

english

Fichier:

PDF, 851 KB

english, 2011

42

Study of the inversion behaviors of Al2O3/InxGa1−xAs metal–oxide–semiconductor capacitors with different In contents

Yun-Chi Wu, Edward Yi Chang, Yueh-Chin Lin, Chi-Chung Kei, Mantu K. Hudait, Marko Radosavljevic, Yuen-Yee Wong, Chia-Ta Chang, Jui-Chien Huang, Shih-Hsuan Tang

Journal:

Solid-State Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 648 KB

english, 2010

43

The purification of human chorionic gonadotropin on DEAE-Sephadex

Yi-Han Chang, Edward H. Wiseman, Rex Pinson Jr.

Journal:

Journal of Chromatography A

Année:

1967

Langue:

english

Fichier:

PDF, 944 KB

english, 1967

44

The performance of GaAs power MESFET’s using backside copper metallization

Chang-You Chen, Li Chang, Edward Yi Chang, Szu-Houng Chen, Yueh-Chin Lin

Journal:

Solid-State Electronics

Année:

2002

Langue:

english

Fichier:

PDF, 388 KB

english, 2002

45

MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN buffer

Kung-Liang Lin, Edward-Yi Chang, Jui-Chien Huang, Wei-Ching Huang, Yu-Lin Hsiao, Chen-Hao Chiang, Tingkai Li, Doug Tweet, Jer-Shen Maa, Sheng-Teng Hsu

Journal:

physica status solidi (c)

Année:

2008

Langue:

english

Fichier:

PDF, 462 KB

english, 2008

46

Discovery of a perceptual distance function for measuring image similarity

Beitao Li, Edward Chang, Yi Wu

Journal:

Multimedia Systems

Année:

2003

Langue:

english

Fichier:

PDF, 297 KB

english, 2003

47

Anatomy of a multicamera video surveillance system

Long Jiao, Yi Wu, Gang Wu, Edward Y. Chang, Yuan-Fang Wang

Journal:

Multimedia Systems

Année:

2004

Langue:

english

Fichier:

PDF, 984 KB

english, 2004

48

A novel method of microfabrication and manipulation of bacterial teamsters in low Reynolds number fluidic environments

Edward B. Steager, Jigarkumar A. Patel, Chang-Beom Kim, Dong Kee Yi, Woong Lee, Min Jun Kim

Journal:

Microfluidics and Nanofluidics

Année:

2008

Langue:

english

Fichier:

PDF, 517 KB

english, 2008

49

Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures

Chung-Yu Lu, Edward Yi Chang, Jui-Chien Huang, Chia-Ta Chang, Mei-Hsuan Lin, Ching-Tung Lee

Journal:

Journal of Electronic Materials

Année:

2008

Langue:

english

Fichier:

PDF, 234 KB

english, 2008

50

Novel Cu/Cr/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs

Kartika Chandra Sahoo, Chun-Wei Chang, Yuen-Yee Wong, Tung-Ling Hsieh, Edward Yi Chang, Ching-Ting Lee

Journal:

Journal of Electronic Materials

Année:

2008

Langue:

english

Fichier:

PDF, 393 KB

english, 2008